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Neha Paras

Neha Paras

Neha Paras
Neha Paras
Assistant Professor
Centre/School/Special Centre
Special Centre for Nanoscience
Room No
109
Off. Phone
011-26749140
Email
nehaparasrao@mail.jnu.ac.in, neharao1993@gmail.com
Personal Webpage
https://jnu.ac.in
Qualifications

PhD (Low Power VLSI Devices, 2020), National Institute of Technology (NIT), Kurukshetra, India
M.Tech. (Microelectronics and VLSI Design, 2016), Electronic Science Department, Kurukshetra University, India
B.Tech. (Electronics and Communication engineering, 2014), Kurukshetra University, India

Areas of Interest/Specialization

VLSI Design, Nanoelectronics and Bioelectronics

Experience

Assistant Professor, SCNS, JNU, New Delhi (May 2023 – Till Date)
Assistant Professor, NIT Delhi (Jan 2022 – April 2023)
Assistant Professor, PEC Chandigarh (Sept 2021 – Dec 2021)
Assistant Professor, NIT Jalandhar (Jan 2021 – June 2021)

Awards & Honours

Qualified UGC NET (Electronic Science) 2020
SERB DST Travel Grant (Los Angeles, USA) 2019
MHRD PhD Fellowship (2017)

International Collaboration/Consultancy

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Best Peer Reviewed Publications
  1. Billel Smaani, Neha Paras, Shiromani Balmukund Rahi, Young Suh Song, Ramakant Yadav, and Subham Tayal, “Impact of the Self-Heating Effect on the Nanosheet FET Performance” ECS Journal of Solid State Science and Technology, Vol. 12, 021005, PP: 1-18, (2023), IOP Science. (ISSN:2162-8777) (DOI: 10.1149/2162-8777/acb96b), Scopus, IF: 2.07, HI: 56.
  2. Jeetendra Singh, Shailendra Singh and Neha Paras, “Design and Integration of Vertical TFET and Memristor for Better Realization of Logical Functions,” Silicon, Vol. 14, (2022) Springer. (ISSN: 1876-9918). (DOI: 10.1007/s12633-022-02047-1) SCI, Scopus, IF: 2.941, HI: 34.
  3. Deepika, Neha Paras, Anil Arya, Rajesh Kumar, Shashi Sharma, Sohan Lal, V. Kumar and Anurag Gaur, “Room temperature magento-electric coupling in Pb-Zn substituted Co2Y-hexaferrite,” Journal of Materials Science: Materials in Electronics, Vol. 33, No. 18, (2022), Springer. (ISSN: 0957-4522) (DOI: 10.1007/s10854-022-08561-7) SCI, Scopus, IF: 2.478, HI: 80.
  4. Neha Paras and S. S. Chauhan, “Temperature sensitivity analysis of vertical tunneling based dual metal Gate TFET on analog/RF FOMs,” Applied Physics A: Materials Science & Processing, Vol. 125, No. 5, 317, (2019), Springer. (ISSN: 1432-0630). (DOI: 10.1007/s00339-019-2621-x), SCI, Scopus, IF: 2.983, HI: 149
  5. Neha Paras and S. S. Chauhan, “A novel vertical tunneling based Ge-source TFET with enhanced DC and RF characteristics for prospect low power applications,” Microelectronic Engineering, Vol. 217, 111103, (2019), Elsevier. (ISSN: 0167-9317) (DOI: 10.1016/j.mee.2019.111103), SCI, Scopus, IF: 2.662, HI: 99
  6. Neha Paras and S. S. Chauhan, “Insights into the DC, RF/Analog and linearity performance of vertical tunneling based TFET for low-power applications,” Microelectronic Engineering, Vol. 216, 111043, (2019), Elsevier. (ISSN: 0167-9317) (DOI: 10.1016/j.mee.2019.111043), SCI, Scopus, IF: 2.662, HI: 99
  7. Neha Paras and S. S. Chauhan, “Vertical Tunneling Based Tunnel Field Effect Transistor with Workfunction Engineered Hetero-Gate to Enhance DC Characteristics,” Journal of Nanoelectronics and Optoelectronics, Vol. 14, No.1, (2019), American Scientific Publishers.(ISSN: 1555-1318) (DOI: 10.1166/jno.2019.2427), SCI-E, IF: 1.069, HI: 23
Recent Peer Reviewed Journals/Books
  1. Neha Paras, Shiromani Balmukund Rahi, Abhishek Kumar Upadhyay, Manisha Bharti, Young Suh Song, “Design and analysis of novel La: HfO2 gate stacked ferroelectric tunnel FET for non-volatile memory applications, Memories-Materials, Devices, Circuits and Systems, Vol. 7, 100101, (2024), Elsevier, (ISSN: 2773-0646) (DOI; 10.1016/j.memori.2024.100101).
  2. Pooja Raghav, Manisha Bharti, Neha Paras, “Detection of Herpes Biomolecule using Ge-based Dielectrically Modulated TFET,” International Journal of Microsystems and IoT, Vol 2, No. 10, pp. 1239-1245, (2025), (DOI: 10.5281/zenodo.14167709)
  3. Abhishek Kumar Upadhyay, Siromani Balmukund Rahi, Billel Smaani, Ball Mukund Mani Tripathi, Neha Paras, Ribu Mathew, Seema Rajput, Ankur Beohar, “Compact analytical model for graphene field effect transistor-Drift-diffusion approach,” Advanced MOS Devices and their Circuit Applications, CRC Press, pp. no.- 56-73, ISBN 9781032670270, (2024). DOI: 10.1201/9781032670270-5.
  4. Sahil Saurabh, Manisha Bharti and Neha Paras, "A Comprehensive Evaluation of Schmitt Trigger Designs in 90nm CMOS Technology," ICECSP, IEEE Xplore, 2024, (DOI: 10.1109/ICECSP61809.2024.10698593).
  5. Poonam Sharma, Manisha Bharti, Neha Paras, “Dynamic Power Reduction in dual edge triggered D-Flip-flop clock gating using Memristor,” ICECSP, IEEE Xplore, 2024, (DOI: 10.1109/SCEECS61402.2024.10482102).
Patents (if any)

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A warm welcome to the modified and updated website of the Centre for East Asian Studies. The East Asian region has been at the forefront of several path-breaking changes since 1970s beginning with the redefining the development architecture with its State-led development model besides emerging as a major region in the global politics and a key hub of the sophisticated technologies. The Centre is one of the thirteen Centres of the School of International Studies, Jawaharlal Nehru University, New Delhi that provides a holistic understanding of the region.

Initially, established as a Centre for Chinese and Japanese Studies, it subsequently grew to include Korean Studies as well. At present there are eight faculty members in the Centre. Several distinguished faculty who have now retired include the late Prof. Gargi Dutt, Prof. P.A.N. Murthy, Prof. G.P. Deshpande, Dr. Nranarayan Das, Prof. R.R. Krishnan and Prof. K.V. Kesavan. Besides, Dr. Madhu Bhalla served at the Centre in Chinese Studies Programme during 1994-2006. In addition, Ms. Kamlesh Jain and Dr. M. M. Kunju served the Centre as the Documentation Officers in Chinese and Japanese Studies respectively.

The academic curriculum covers both modern and contemporary facets of East Asia as each scholar specializes in an area of his/her interest in the region. The integrated course involves two semesters of classes at the M. Phil programme and a dissertation for the M. Phil and a thesis for Ph. D programme respectively. The central objective is to impart an interdisciplinary knowledge and understanding of history, foreign policy, government and politics, society and culture and political economy of the respective areas. Students can explore new and emerging themes such as East Asian regionalism, the evolving East Asian Community, the rise of China, resurgence of Japan and the prospects for reunification of the Korean peninsula. Additionally, the Centre lays great emphasis on the building of language skills. The background of scholars includes mostly from the social science disciplines; History, Political Science, Economics, Sociology, International Relations and language.

Several students of the centre have been recipients of prestigious research fellowships awarded by Japan Foundation, Mombusho (Ministry of Education, Government of Japan), Saburo Okita Memorial Fellowship, Nippon Foundation, Korea Foundation, Nehru Memorial Fellowship, and Fellowship from the Chinese and Taiwanese Governments. Besides, students from Japan receive fellowship from the Indian Council of Cultural Relations.